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VS-GA200HS60S1PBF

VS-GA200HS60S1PBF

For Reference Only

Part Number VS-GA200HS60S1PBF
PNEDA Part # VS-GA200HS60S1PBF
Description IGBT 600V 480A 830W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GA200HS60S1PBF Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GA200HS60S1PBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GA200HS60S1PBF, VS-GA200HS60S1PBF Datasheet (Total Pages: 7, Size: 151.04 KB)
PDFVS-GA200HS60S1 Datasheet Cover
VS-GA200HS60S1 Datasheet Page 2 VS-GA200HS60S1 Datasheet Page 3 VS-GA200HS60S1 Datasheet Page 4 VS-GA200HS60S1 Datasheet Page 5 VS-GA200HS60S1 Datasheet Page 6 VS-GA200HS60S1 Datasheet Page 7

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VS-GA200HS60S1PBF Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)480A
Power - Max830W
Vce(on) (Max) @ Vge, Ic1.21V @ 15V, 200A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce32.5nF @ 30V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-Pak
Supplier Device PackageINT-A-PAK

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