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VS-GT400TH120N Datasheet

VS-GT400TH120N Datasheet
Total Pages: 6
Size: 128.04 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers: VS-GT400TH120N
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VS-GT400TH120N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

600A

Power - Max

2119W

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 400A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

28.8nF @ 25V

Input

Standard

NTC Thermistor

No

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 8)

Supplier Device Package

Double INT-A-PAK