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VS-GT400TH120N

VS-GT400TH120N

For Reference Only

Part Number VS-GT400TH120N
PNEDA Part # VS-GT400TH120N
Description IGBT 1200V 600A 2119W DIAP
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GT400TH120N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GT400TH120N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GT400TH120N, VS-GT400TH120N Datasheet (Total Pages: 6, Size: 128.04 KB)
PDFVS-GT400TH120N Datasheet Cover
VS-GT400TH120N Datasheet Page 2 VS-GT400TH120N Datasheet Page 3 VS-GT400TH120N Datasheet Page 4 VS-GT400TH120N Datasheet Page 5 VS-GT400TH120N Datasheet Page 6

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VS-GT400TH120N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)600A
Power - Max2119W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 400A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce28.8nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 8)
Supplier Device PackageDouble INT-A-PAK

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