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VS-GT50TP60N Datasheet

VS-GT50TP60N Datasheet
Total Pages: 6
Size: 126.53 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers: VS-GT50TP60N
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VS-GT50TP60N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

85A

Power - Max

208W

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

3.03nF @ 30V

Input

Standard

NTC Thermistor

No

Operating Temperature

175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-PAK (3 + 4)

Supplier Device Package

INT-A-PAK