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VS-GT50TP60N

VS-GT50TP60N

For Reference Only

Part Number VS-GT50TP60N
PNEDA Part # VS-GT50TP60N
Description IGBT 600V 85A 208W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GT50TP60N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GT50TP60N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GT50TP60N, VS-GT50TP60N Datasheet (Total Pages: 6, Size: 126.53 KB)
PDFVS-GT50TP60N Datasheet Cover
VS-GT50TP60N Datasheet Page 2 VS-GT50TP60N Datasheet Page 3 VS-GT50TP60N Datasheet Page 4 VS-GT50TP60N Datasheet Page 5 VS-GT50TP60N Datasheet Page 6

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VS-GT50TP60N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)85A
Power - Max208W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce3.03nF @ 30V
InputStandard
NTC ThermistorNo
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-PAK (3 + 4)
Supplier Device PackageINT-A-PAK

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