1517-110M
For Reference Only
| Part Number | 1517-110M |
| PNEDA Part # | 1517-110M |
| Description | RF TRANS NPN 70V 1.65GHZ 55AW-1 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,498 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1517-110M Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 1517-110M |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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1517-110M Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Frequency - Transition | 1.48GHz ~ 1.65GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 7.3dB ~ 8.6dB |
| Power - Max | 350W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Current - Collector (Ic) (Max) | 9A |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | 55AW-1 |
| Supplier Device Package | 55AW-1 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 9.5V Frequency - Transition 900MHz Noise Figure (dB Typ @ f) - Gain 8dB Power - Max 2W DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 300mA, 5V Current - Collector (Ic) (Max) 500mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 35V Frequency - Transition 175MHz Noise Figure (dB Typ @ f) - Gain 7.6dB Power - Max 60W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V Current - Collector (Ic) (Max) 5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M135 Supplier Device Package M135 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 40V Frequency - Transition 2.2GHz ~ 2.5GHz Noise Figure (dB Typ @ f) - Gain 8.5dB Power - Max 10W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA, 5V Current - Collector (Ic) (Max) 600mA Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55LV Supplier Device Package 55LV |
