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SD8268-21H

SD8268-21H

For Reference Only

Part Number SD8268-21H
PNEDA Part # SD8268-21H
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SD8268-21H Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberSD8268-21H
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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SD8268-21H Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

-

Gain

7dB

Power - Max

200W

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 2A, 5V

Current - Collector (Ic) (Max)

8A

Operating Temperature

200°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Infineon Technologies

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

14GHz

Noise Figure (dB Typ @ f)

1dB ~ 1.3dB @ 1.8GHz ~ 3GHz

Gain

11.5dB ~ 16dB

Power - Max

210mW

DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 15mA, 3V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

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BF199

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

1.1GHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

38 @ 7mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6GHz

Noise Figure (dB Typ @ f)

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Gain

9.5dB ~ 14.5dB

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 30mA, 8V

Current - Collector (Ic) (Max)

90mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

8A

Operating Temperature

200°C (TJ)

Mounting Type

Chassis, Stud Mount

Package / Case

M135

Supplier Device Package

M135

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