1N3211R
For Reference Only
| Part Number | 1N3211R |
| PNEDA Part # | 1N3211R |
| Description | DIODE GEN PURP REV 300V 15A DO5 |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,668 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N3211R Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N3211R |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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1N3211R Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 300V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 15A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 50V |
| Capacitance @ Vr, F | - |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Powerex Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 800A Voltage - Forward (Vf) (Max) @ If 1.8V @ 1500A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 10µs Current - Reverse Leakage @ Vr 50mA @ 1200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package DO-200AA, R62 Operating Temperature - Junction - |
Manufacturer IXYS Series HiPerFRED™ Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 2.52V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 250µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer STMicroelectronics Series Automotive, AEC-Q101, ECOPACK®2 Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.45V @ 20A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 150µA @ 600V Capacitance @ Vr, F 1250pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK Operating Temperature - Junction -40°C ~ 175°C |
