1N5817 B0G
For Reference Only
| Part Number | 1N5817 B0G |
| PNEDA Part # | 1N5817-B0G |
| Description | DIODE SCHOTTKY 20V 1A DO204AL |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 5,292 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5817 B0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | 1N5817 B0G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1N5817 B0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 450mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 20V |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -55°C ~ 125°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 1A (DC) Voltage - Forward (Vf) (Max) @ If 950mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 5µA @ 300V Capacitance @ Vr, F 11pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case SOD-123F Supplier Device Package SOD-123FL Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 180µA @ 650V Capacitance @ Vr, F 300pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case 4-PowerTSFN Supplier Device Package PG-VSON-4 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 500V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.7V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 500V Capacitance @ Vr, F 8pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
