2A5
For Reference Only
| Part Number | 2A5 |
| PNEDA Part # | 2A5 |
| Description | RF TRANS NPN 22V 3.7GHZ 55ET |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,844 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 28 - Jul 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2A5 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2A5 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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2A5 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 22V |
| Frequency - Transition | 3.4GHz ~ 3.7GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 7dB ~ 9dB |
| Power - Max | 5.3W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Current - Collector (Ic) (Max) | 3mA |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Stud Mount |
| Package / Case | 55ET |
| Supplier Device Package | 55ET |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) 6.5dB @ 60MHz Gain 14dB @ 200MHz Power - Max 350W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1.4dB ~ 2dB @ 1GHz Gain 9dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 9V Frequency - Transition 14GHz Noise Figure (dB Typ @ f) 1dB @ 1.8GHz Gain 15.5dB Power - Max 210mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 15mA, 3V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package PG-TSFP-3 |
