2N6764
For Reference Only
| Part Number | 2N6764 |
| PNEDA Part # | 2N6764 |
| Description | MOSFET N-CH 100V TO-204AE TO-3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,862 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 10 - May 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
2N6764 Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | 2N6764 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2N6764 Datasheet
- where to find 2N6764
- Microsemi
- Microsemi 2N6764
- 2N6764 PDF Datasheet
- 2N6764 Stock
- 2N6764 Pinout
- Datasheet 2N6764
- 2N6764 Supplier
- Microsemi Distributor
- 2N6764 Price
- 2N6764 Distributor
2N6764 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3 |
| Package / Case | TO-204AE |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2680pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Ta), 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP (5x6), Power56 Package / Case 8-PowerWDFN |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 76mOhm @ 23A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 25V FET Feature - Power Dissipation (Max) 660W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7.66nF @ 25V FET Feature - Power Dissipation (Max) 480W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 94pF @ 25V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 26mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 155W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
