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2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

For Reference Only

Part Number 2SB1481(TOJS,Q,M)
PNEDA Part # 2SB1481-TOJS-Q-M
Description TRANS PNP 4A 100V TO220-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SB1481(TOJS Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SB1481(TOJS,Q,M)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SB1481(TOJS, 2SB1481(TOJS Datasheet (Total Pages: 4, Size: 157.13 KB)
PDF2SB1481(TOJS Datasheet Cover
2SB1481(TOJS Datasheet Page 2 2SB1481(TOJS Datasheet Page 3 2SB1481(TOJS Datasheet Page 4

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2SB1481(TOJS Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A, 2V
Power - Max2W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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