2SC5501A-4-TR-E
For Reference Only
| Part Number | 2SC5501A-4-TR-E |
| PNEDA Part # | 2SC5501A-4-TR-E |
| Description | RF TRANS NPN 10V 7GHZ 4MCP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SC5501A-4-TR-E Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2SC5501A-4-TR-E |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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2SC5501A-4-TR-E Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 1GHz |
| Gain | 13dB |
| Power - Max | 500mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 20mA, 5V |
| Current - Collector (Ic) (Max) | 70mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | 4-MCP |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 800MHz Noise Figure (dB Typ @ f) 6dB @ 200MHz Gain 24dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA, 10V Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 15GHz Noise Figure (dB Typ @ f) 1.7dB @ 2GHz Gain 15dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 20mA, 3V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package - |
