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2SC5606-T1-A

2SC5606-T1-A

For Reference Only

Part Number 2SC5606-T1-A
PNEDA Part # 2SC5606-T1-A
Description RF TRANS NPN 3.3V 21GHZ SOT523
Manufacturer CEL
Unit Price Request a Quote
In Stock 5,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SC5606-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part Number2SC5606-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
2SC5606-T1-A, 2SC5606-T1-A Datasheet (Total Pages: 7, Size: 1,132.15 KB)
PDF2SC5606-A Datasheet Cover
2SC5606-A Datasheet Page 2 2SC5606-A Datasheet Page 3 2SC5606-A Datasheet Page 4 2SC5606-A Datasheet Page 5 2SC5606-A Datasheet Page 6 2SC5606-A Datasheet Page 7

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2SC5606-T1-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.3V
Frequency - Transition21GHz
Noise Figure (dB Typ @ f)1.2dB @ 2GHz
Gain14dB
Power - Max115mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-523
Supplier Device PackageSOT-523

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.2dB ~ 1.8dB @ 900MHz ~ 2GHz

Gain

16dB

Power - Max

360mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 80mA, 2V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

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Mounting Type

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SC-82A, SOT-343

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Series

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Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

1.03GHz ~ 1.09GHz

Noise Figure (dB Typ @ f)

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Gain

10.3dB ~ 11.65dB

Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 500mA, 5V

Current - Collector (Ic) (Max)

5A

Operating Temperature

200°C (TJ)

Mounting Type

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Package / Case

55CX

Supplier Device Package

55CX

Manufacturer

CEL

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

7GHz

Noise Figure (dB Typ @ f)

1.4dB ~ 2dB @ 1GHz

Gain

9dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 20mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

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TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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MRF553G

Microsemi

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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ON Semiconductor

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Series

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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