2SJ649-AZ
For Reference Only
| Part Number | 2SJ649-AZ |
| PNEDA Part # | 2SJ649-AZ |
| Description | MOSFET P-CH 60V 20A TO-220 |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 7,866 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SJ649-AZ Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | 2SJ649-AZ |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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2SJ649-AZ Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 Isolated Tab |
| Package / Case | TO-220-3 Isolated Tab |
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