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2SJ661-1E

2SJ661-1E

For Reference Only

Part Number 2SJ661-1E
PNEDA Part # 2SJ661-1E
Description MOSFET P-CH 60V 38A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,516
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ661-1E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2SJ661-1E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ661-1E, 2SJ661-1E Datasheet (Total Pages: 9, Size: 369.81 KB)
PDF2SJ661-DL-1E Datasheet Cover
2SJ661-DL-1E Datasheet Page 2 2SJ661-DL-1E Datasheet Page 3 2SJ661-DL-1E Datasheet Page 4 2SJ661-DL-1E Datasheet Page 5 2SJ661-DL-1E Datasheet Page 6 2SJ661-DL-1E Datasheet Page 7 2SJ661-DL-1E Datasheet Page 8 2SJ661-DL-1E Datasheet Page 9

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2SJ661-1E Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4360pF @ 20V
FET Feature-
Power Dissipation (Max)1.65W (Ta), 65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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