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FDD306P

FDD306P

For Reference Only

Part Number FDD306P
PNEDA Part # FDD306P
Description MOSFET P-CH 12V 6.7A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 24,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD306P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD306P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD306P, FDD306P Datasheet (Total Pages: 7, Size: 768.49 KB)
PDFFDD306P Datasheet Cover
FDD306P Datasheet Page 2 FDD306P Datasheet Page 3 FDD306P Datasheet Page 4 FDD306P Datasheet Page 5 FDD306P Datasheet Page 6 FDD306P Datasheet Page 7

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FDD306P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs28mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1290pF @ 6V
FET Feature-
Power Dissipation (Max)52W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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