AUIRLS4030
For Reference Only
| Part Number | AUIRLS4030 |
| PNEDA Part # | AUIRLS4030 |
| Description | MOSFET N-CH 100V 180A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,030 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AUIRLS4030 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | AUIRLS4030 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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AUIRLS4030 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 110A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 11360pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
