Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFH5210TR2PBF

IRFH5210TR2PBF

For Reference Only

Part Number IRFH5210TR2PBF
PNEDA Part # IRFH5210TR2PBF
Description MOSFET N-CH 100V 10A 5X6 PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH5210TR2PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH5210TR2PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFH5210TR2PBF Datasheet
  • where to find IRFH5210TR2PBF
  • Infineon Technologies

  • Infineon Technologies IRFH5210TR2PBF
  • IRFH5210TR2PBF PDF Datasheet
  • IRFH5210TR2PBF Stock

  • IRFH5210TR2PBF Pinout
  • Datasheet IRFH5210TR2PBF
  • IRFH5210TR2PBF Supplier

  • Infineon Technologies Distributor
  • IRFH5210TR2PBF Price
  • IRFH5210TR2PBF Distributor

IRFH5210TR2PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2570pF @ 25V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

The Products You May Be Interested In

EPC2007

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

30mOhm @ 6A, 5V

Vgs(th) (Max) @ Id

2.5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 5V

Vgs (Max)

+6V, -5V

Input Capacitance (Ciss) (Max) @ Vds

205pF @ 50V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die Outline (5-Solder Bar)

Package / Case

Die

AOD4182_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AON7408L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta), 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

22mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 20W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3x3)

Package / Case

8-PowerVDFN

IRL2910STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

26mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ZVN4310GTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.67A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

540mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

RB521S30T5G

RB521S30T5G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

ADM3490EARZ

ADM3490EARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

2920L150DR

2920L150DR

Littelfuse

PTC RESET FUSE 33V 1.5A 2920

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

74438356150

74438356150

Wurth Electronics

FIXED IND 15UH 1.9A 230MOHM SMD

20IMX35D12D12-8G

20IMX35D12D12-8G

Bel Power Solutions

DC DC CONVERTER 12V 12V 12V 35W

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

UES1302

UES1302

Microsemi

DIODE GEN PURP 100V 6A AXIAL

ADT7411ARQZ-REEL

ADT7411ARQZ-REEL

Analog Devices

SENSOR DIGITAL -40C-120C 16QSOP