Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2007

EPC2007

For Reference Only

Part Number EPC2007
PNEDA Part # EPC2007
Description GANFET TRANS 100V 6A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 4,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2007 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2007
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2007, EPC2007 Datasheet (Total Pages: 6, Size: 1,051.35 KB)
PDFEPC2007 Datasheet Cover
EPC2007 Datasheet Page 2 EPC2007 Datasheet Page 3 EPC2007 Datasheet Page 4 EPC2007 Datasheet Page 5 EPC2007 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2007 Datasheet
  • where to find EPC2007
  • EPC

  • EPC EPC2007
  • EPC2007 PDF Datasheet
  • EPC2007 Stock

  • EPC2007 Pinout
  • Datasheet EPC2007
  • EPC2007 Supplier

  • EPC Distributor
  • EPC2007 Price
  • EPC2007 Distributor

EPC2007 Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs2.8nC @ 5V
Vgs (Max)+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds205pF @ 50V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (5-Solder Bar)
Package / CaseDie

The Products You May Be Interested In

IRF6725MTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 100W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

DMTH4005SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20.9A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

49.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3062pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.6W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

APT5020BN

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS IV®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-247-3

IRF8788TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

24A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5720pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRLR3714ZTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.1nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 10V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

BNX002-01

BNX002-01

Murata

FILTER LC TH

STM32F407IGH6

STM32F407IGH6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 176UBGA

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

ADUM7641CRQZ

ADUM7641CRQZ

Analog Devices

DGTL ISO 1KV 6CH GEN PURP 20QSOP

LM833DT

LM833DT

STMicroelectronics

IC AUDIO 2 CIRCUIT 8SO

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

MIC2025-1YM

MIC2025-1YM

Microchip Technology

IC SW DISTRIBUTION 1CHAN 8SOIC

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

TL062ID

TL062ID

STMicroelectronics

IC OPAMP JFET 2 CIRCUIT 8SO

ADM3202ARUZ-REEL7

ADM3202ARUZ-REEL7

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

74279226101

74279226101

Wurth Electronics

FERRITE BEAD 100 OHM 1812 1LN

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC