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2SK2719(F)

2SK2719(F)

For Reference Only

Part Number 2SK2719(F)
PNEDA Part # 2SK2719-F
Description MOSFET N-CH 900V 3A TO-3PN
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK2719(F) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK2719(F)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK2719(F), 2SK2719(F) Datasheet (Total Pages: 5, Size: 288.78 KB)
PDF2SK2719(F) Datasheet Cover
2SK2719(F) Datasheet Page 2 2SK2719(F) Datasheet Page 3 2SK2719(F) Datasheet Page 4 2SK2719(F) Datasheet Page 5

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2SK2719(F) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3

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