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2SK3430-Z-E1-AZ

2SK3430-Z-E1-AZ

For Reference Only

Part Number 2SK3430-Z-E1-AZ
PNEDA Part # 2SK3430-Z-E1-AZ
Description MOSFET N-CH 40V 80A TO220AB
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,568
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3430-Z-E1-AZ Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part Number2SK3430-Z-E1-AZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3430-Z-E1-AZ, 2SK3430-Z-E1-AZ Datasheet (Total Pages: 10, Size: 217.47 KB)
PDF2SK3430-Z-E1-AZ Datasheet Cover
2SK3430-Z-E1-AZ Datasheet Page 2 2SK3430-Z-E1-AZ Datasheet Page 3 2SK3430-Z-E1-AZ Datasheet Page 4 2SK3430-Z-E1-AZ Datasheet Page 5 2SK3430-Z-E1-AZ Datasheet Page 6 2SK3430-Z-E1-AZ Datasheet Page 7 2SK3430-Z-E1-AZ Datasheet Page 8 2SK3430-Z-E1-AZ Datasheet Page 9 2SK3430-Z-E1-AZ Datasheet Page 10

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2SK3430-Z-E1-AZ Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs7.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 84W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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