Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

3LP01C-TB-E

3LP01C-TB-E

For Reference Only

Part Number 3LP01C-TB-E
PNEDA Part # 3LP01C-TB-E
Description MOSFET P-CH 30V 100MA CP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,610
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

3LP01C-TB-E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number3LP01C-TB-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
3LP01C-TB-E, 3LP01C-TB-E Datasheet (Total Pages: 6, Size: 253.58 KB)
PDF3LP01C-TB-E Datasheet Cover
3LP01C-TB-E Datasheet Page 2 3LP01C-TB-E Datasheet Page 3 3LP01C-TB-E Datasheet Page 4 3LP01C-TB-E Datasheet Page 5 3LP01C-TB-E Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 3LP01C-TB-E Datasheet
  • where to find 3LP01C-TB-E
  • ON Semiconductor

  • ON Semiconductor 3LP01C-TB-E
  • 3LP01C-TB-E PDF Datasheet
  • 3LP01C-TB-E Stock

  • 3LP01C-TB-E Pinout
  • Datasheet 3LP01C-TB-E
  • 3LP01C-TB-E Supplier

  • ON Semiconductor Distributor
  • 3LP01C-TB-E Price
  • 3LP01C-TB-E Distributor

3LP01C-TB-E Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs10.4Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs1.43nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds7.5pF @ 10V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-CP
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

STP5NK65ZFP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 2.1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

TN0106N3-G-P003

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

SIHG22N50D-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1938pF @ 100V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

IRLIZ24G

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

100mOhm @ 8.4A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

BUZ30A

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

STM809MWX6F

STM809MWX6F

STMicroelectronics

IC MPU RESET CIRC 4.38V SOT23

ADUM1100ARZ

ADUM1100ARZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

TMP36GT9Z

TMP36GT9Z

Analog Devices

SENSOR ANALOG -40C-125C TO92-3

C8051F120-GQR

C8051F120-GQR

Silicon Labs

IC MCU 8BIT 128KB FLASH 100TQFP

AT45DB161D-SU

AT45DB161D-SU

Adesto Technologies

IC FLASH 16M SPI 66MHZ 8SOIC

DS1624S+

DS1624S+

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

NC7WZ04P6X

NC7WZ04P6X

ON Semiconductor

IC INVERTER 2CH 2-INP SC70-6

BZX84C5V1LT1G

BZX84C5V1LT1G

ON Semiconductor

DIODE ZENER 5.1V 225MW SOT23-3

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD

SI1308EDL-T1-GE3

SI1308EDL-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 1.4A SOT323

MC9S08LC36LK

MC9S08LC36LK

NXP

IC MCU 8BIT 36KB FLASH 80FQFP

SF-1206S400-2

SF-1206S400-2

Bourns

FUSE BOARD MOUNT 4A 32VDC 1206