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AFGHL50T65SQDC

AFGHL50T65SQDC

For Reference Only

Part Number AFGHL50T65SQDC
PNEDA Part # AFGHL50T65SQDC
Description IGBT 650V A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 10,440
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AFGHL50T65SQDC Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberAFGHL50T65SQDC
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
AFGHL50T65SQDC, AFGHL50T65SQDC Datasheet (Total Pages: 10, Size: 340.22 KB)
PDFAFGHL50T65SQDC Datasheet Cover
AFGHL50T65SQDC Datasheet Page 2 AFGHL50T65SQDC Datasheet Page 3 AFGHL50T65SQDC Datasheet Page 4 AFGHL50T65SQDC Datasheet Page 5 AFGHL50T65SQDC Datasheet Page 6 AFGHL50T65SQDC Datasheet Page 7 AFGHL50T65SQDC Datasheet Page 8 AFGHL50T65SQDC Datasheet Page 9 AFGHL50T65SQDC Datasheet Page 10

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AFGHL50T65SQDC Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max238W
Switching Energy131µJ (on), 96µJ (off)
Input TypeStandard
Gate Charge94nC
Td (on/off) @ 25°C17.6ns/94.4ns
Test Condition400V, 12.5A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Infineon Technologies

Manufacturer

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Series

Automotive, AEC-Q101, TrenchStop™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

270W

Switching Energy

450µJ (on), 160µJ (off)

Input Type

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Gate Charge

116nC

Td (on/off) @ 25°C

21ns/173ns

Test Condition

400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

15ns/36ns

Test Condition

300V, 10A, 20Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

33A

Current - Collector Pulsed (Icm)

27A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 9A

Power - Max

210W

Switching Energy

530µJ (on), 380µJ (off)

Input Type

Standard

Gate Charge

45nC

Td (on/off) @ 25°C

14ns/110ns

Test Condition

600V, 9A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

118A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Power - Max

270W

Switching Energy

1mJ (on), 270µJ (off)

Input Type

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Gate Charge

44nC

Td (on/off) @ 25°C

21ns/75ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

120ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

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