AIGW50N65H5XKSA1
For Reference Only
| Part Number | AIGW50N65H5XKSA1 |
| PNEDA Part # | AIGW50N65H5XKSA1 |
| Description | IGBT 650V TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,396 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AIGW50N65H5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | AIGW50N65H5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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AIGW50N65H5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, Trenchstop™ 5 |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 150A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | 270W |
| Switching Energy | 490µJ (on), 140µJ (off) |
| Input Type | Standard |
| Gate Charge | 1018nC |
| Td (on/off) @ 25°C | 21ns/156ns |
| Test Condition | 400V, 25A, 12Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 45A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A Power - Max 216W Switching Energy 1mJ (on), 600µJ (off) Input Type Standard Gate Charge 135nC Td (on/off) @ 25°C 50ns/240ns Test Condition 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr) 120ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 200A Current - Collector Pulsed (Icm) 580A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A Power - Max 1040W Switching Energy - Input Type Standard Gate Charge 350nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PLUS247™-3 |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A Power - Max 179W Switching Energy 440µJ (on), 330µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 36ns/225ns Test Condition 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package PG-TO263-3 |
