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IRG7PH37K10DPBF

IRG7PH37K10DPBF

For Reference Only

Part Number IRG7PH37K10DPBF
PNEDA Part # IRG7PH37K10DPBF
Description IGBT 1200V 45A 216W TO247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7PH37K10DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7PH37K10DPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7PH37K10DPBF, IRG7PH37K10DPBF Datasheet (Total Pages: 12, Size: 641.62 KB)
PDFIRG7PH37K10DPBF Datasheet Cover
IRG7PH37K10DPBF Datasheet Page 2 IRG7PH37K10DPBF Datasheet Page 3 IRG7PH37K10DPBF Datasheet Page 4 IRG7PH37K10DPBF Datasheet Page 5 IRG7PH37K10DPBF Datasheet Page 6 IRG7PH37K10DPBF Datasheet Page 7 IRG7PH37K10DPBF Datasheet Page 8 IRG7PH37K10DPBF Datasheet Page 9 IRG7PH37K10DPBF Datasheet Page 10 IRG7PH37K10DPBF Datasheet Page 11

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IRG7PH37K10DPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)45A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 15A
Power - Max216W
Switching Energy1mJ (on), 600µJ (off)
Input TypeStandard
Gate Charge135nC
Td (on/off) @ 25°C50ns/240ns
Test Condition600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)120ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Test Condition

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Mounting Type

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Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

433V, 95A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

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Switching Energy

3.4mJ (on), 1.1mJ (off)

Input Type

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Gate Charge

313nC

Td (on/off) @ 25°C

116ns/286ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IKZ75N65EL5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™ 5

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 75A

Power - Max

536W

Switching Energy

1.57mJ (on), 3.2mJ (off)

Input Type

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Gate Charge

436nC

Td (on/off) @ 25°C

120ns/275ns

Test Condition

400V, 75A, 23Ohm, 15V

Reverse Recovery Time (trr)

59ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4

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