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APT45GP120JDQ2

APT45GP120JDQ2

For Reference Only

Part Number APT45GP120JDQ2
PNEDA Part # APT45GP120JDQ2
Description IGBT 1200V 75A 329W SOT227
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT45GP120JDQ2 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT45GP120JDQ2
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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APT45GP120JDQ2 Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Power - Max329W
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 45A
Current - Collector Cutoff (Max)750µA
Input Capacitance (Cies) @ Vce4nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseISOTOP
Supplier Device PackageISOTOP®

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 15A

Current - Collector Cutoff (Max)

250µA

Input Capacitance (Cies) @ Vce

1nF @ 25V

Input

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 1200A

Current - Collector Cutoff (Max)

120mA

Input Capacitance (Cies) @ Vce

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Input

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NTC Thermistor

No

Operating Temperature

-40°C ~ 125°C (TJ)

Mounting Type

Chassis Mount

Package / Case

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Supplier Device Package

E11

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