AUIRF7736M2TR
For Reference Only
| Part Number | AUIRF7736M2TR |
| PNEDA Part # | AUIRF7736M2TR |
| Description | MOSFET N-CH 40V 179A DIRECTFET |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,210 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AUIRF7736M2TR Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | AUIRF7736M2TR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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AUIRF7736M2TR Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 108A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 65A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4267pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 63W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ M4 |
| Package / Case | DirectFET™ Isometric M4 |
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Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 11A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 8V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
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Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 172nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 10V FET Feature - Power Dissipation (Max) 158W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (5x6) Dual Side Package / Case 8-PowerWDFN |
