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IRF7701GTRPBF

IRF7701GTRPBF

For Reference Only

Part Number IRF7701GTRPBF
PNEDA Part # IRF7701GTRPBF
Description MOSFET P-CH 12V 10A 8-TSSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7701GTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7701GTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7701GTRPBF, IRF7701GTRPBF Datasheet (Total Pages: 9, Size: 236.14 KB)
PDFIRF7701GTRPBF Datasheet Cover
IRF7701GTRPBF Datasheet Page 2 IRF7701GTRPBF Datasheet Page 3 IRF7701GTRPBF Datasheet Page 4 IRF7701GTRPBF Datasheet Page 5 IRF7701GTRPBF Datasheet Page 6 IRF7701GTRPBF Datasheet Page 7 IRF7701GTRPBF Datasheet Page 8 IRF7701GTRPBF Datasheet Page 9

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IRF7701GTRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds5050pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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