Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AUIRFSL4310

AUIRFSL4310

For Reference Only

Part Number AUIRFSL4310
PNEDA Part # AUIRFSL4310
Description MOSFET N-CH 100V 75A TO262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,014
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRFSL4310 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRFSL4310
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
AUIRFSL4310, AUIRFSL4310 Datasheet (Total Pages: 11, Size: 712.79 KB)
PDFAUIRFSL4310 Datasheet Cover
AUIRFSL4310 Datasheet Page 2 AUIRFSL4310 Datasheet Page 3 AUIRFSL4310 Datasheet Page 4 AUIRFSL4310 Datasheet Page 5 AUIRFSL4310 Datasheet Page 6 AUIRFSL4310 Datasheet Page 7 AUIRFSL4310 Datasheet Page 8 AUIRFSL4310 Datasheet Page 9 AUIRFSL4310 Datasheet Page 10 AUIRFSL4310 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AUIRFSL4310 Datasheet
  • where to find AUIRFSL4310
  • Infineon Technologies

  • Infineon Technologies AUIRFSL4310
  • AUIRFSL4310 PDF Datasheet
  • AUIRFSL4310 Stock

  • AUIRFSL4310 Pinout
  • Datasheet AUIRFSL4310
  • AUIRFSL4310 Supplier

  • Infineon Technologies Distributor
  • AUIRFSL4310 Price
  • AUIRFSL4310 Distributor

AUIRFSL4310 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds7670pF @ 50V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

GP1M023A050N

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3391pF @ 25V

FET Feature

-

Power Dissipation (Max)

347W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

BSZ105N04NSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 14µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

TP2104N3-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

175mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

740mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1515pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXFA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP100N08S207AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

MAX9100EUK+T

MAX9100EUK+T

Maxim Integrated

IC COMPARATOR R-R SOT23-5

FT245RL-REEL

FT245RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB TO PARALLEL FIFO 28-SSOP

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5A SOT-23

LTC6652AHMS8-2.5#PBF

LTC6652AHMS8-2.5#PBF

Linear Technology/Analog Devices

IC VREF SERIES 2.5V 8MSOP

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

LTC3854EMSE#PBF

LTC3854EMSE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 12MSOP

SMBJ12CA

SMBJ12CA

TVS DIODE 12V 19.9V SMB

FXLP34P5X

FXLP34P5X

ON Semiconductor

IC TRNSLTR UNIDIRECTIONAL SC70-5

VLMW1500-GS08

VLMW1500-GS08

Vishay Semiconductor Opto Division

LED COOL WHITE 0402 SMD

DSC1001DL5-024.0000

DSC1001DL5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

ADP2147ACBZ-150-R7

ADP2147ACBZ-150-R7

Analog Devices

IC REG BUCK PROG 800MA 6WLCSP