Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AUIRLR3110Z

AUIRLR3110Z

For Reference Only

Part Number AUIRLR3110Z
PNEDA Part # AUIRLR3110Z
Description MOSFET N-CH 100V 63A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRLR3110Z Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRLR3110Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AUIRLR3110Z Datasheet
  • where to find AUIRLR3110Z
  • Infineon Technologies

  • Infineon Technologies AUIRLR3110Z
  • AUIRLR3110Z PDF Datasheet
  • AUIRLR3110Z Stock

  • AUIRLR3110Z Pinout
  • Datasheet AUIRLR3110Z
  • AUIRLR3110Z Supplier

  • Infineon Technologies Distributor
  • AUIRLR3110Z Price
  • AUIRLR3110Z Distributor

AUIRLR3110Z Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3980pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

2SK4150TZ-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

5.7Ohm @ 200mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

3.7nC @ 4V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 25V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NVMFS5C430NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

666pF @ 25V

FET Feature

-

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPW60R031CFD7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

31mOhm @ 32.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.63mA

Gate Charge (Qg) (Max) @ Vgs

141nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5623pF @ 400V

FET Feature

-

Power Dissipation (Max)

278W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

IRFP4110PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9620pF @ 50V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

PEX8796-AB80BI G

PEX8796-AB80BI G

Broadcom

PCI INT IC MULT-RT GEN 3 SW

NLC565050T-100K-PF

NLC565050T-100K-PF

TDK

FIXED IND 10UH 690MA 210 MOHM

ADM6820ARJZ-REEL7

ADM6820ARJZ-REEL7

Analog Devices

IC POWER SEQUENCER SOT23-6

L5973ADTR

L5973ADTR

STMicroelectronics

IC REG BUCK ADJUSTABLE 2A 8HSOP

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

ATMEGA168PA-MUR

ATMEGA168PA-MUR

Microchip Technology

IC MCU 8BIT 16KB FLASH 32VQFN

MAX3233EEWP+G36

MAX3233EEWP+G36

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SOIC

CJS-1201TB1

CJS-1201TB1

Nidec Copal Electronics

SWITCH SLIDE SPDT 100MA 6V

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB