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SI1065X-T1-E3

SI1065X-T1-E3

For Reference Only

Part Number SI1065X-T1-E3
PNEDA Part # SI1065X-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 12V 1.18A SOT563F
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 5,436
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jul 29 - Aug 3 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SI1065X-T1-E3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSI1065X-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1065X-T1-E3, SI1065X-T1-E3 Datasheet (Total Pages: 8, Size: 172.56 KB)
PDFSI1065X-T1-GE3 Datasheet Cover
SI1065X-T1-GE3 Datasheet Page 2 SI1065X-T1-GE3 Datasheet Page 3 SI1065X-T1-GE3 Datasheet Page 4 SI1065X-T1-GE3 Datasheet Page 5 SI1065X-T1-GE3 Datasheet Page 6 SI1065X-T1-GE3 Datasheet Page 7 SI1065X-T1-GE3 Datasheet Page 8

SI1065X-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.8nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 6V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666

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