SI1065X-T1-E3
For Reference Only
| Part Number | SI1065X-T1-E3 |
| PNEDA Part # | SI1065X-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Description | MOSFET P-CH 12V 1.18A SOT563F |
| Unit Price |
|
| In Stock | 5,436 |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Payment |  |
| Shipping |  |
| Estimated Delivery | Oct 20 - Oct 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [PNEDA-Warranty]* |
SI1065X-T1-E3 Resources
| Brand | Vishay Siliconix |
| Mfr. Part Number | SI1065X-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
SI1065X-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.18A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 6V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-6 |
| Package / Case | SOT-563, SOT-666 |
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