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AUIRLR3636

AUIRLR3636

For Reference Only

Part Number AUIRLR3636
PNEDA Part # AUIRLR3636
Description MOSFET N-CH 60V 99A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRLR3636 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRLR3636
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
AUIRLR3636, AUIRLR3636 Datasheet (Total Pages: 10, Size: 636.32 KB)
PDFAUIRLR3636 Datasheet Cover
AUIRLR3636 Datasheet Page 2 AUIRLR3636 Datasheet Page 3 AUIRLR3636 Datasheet Page 4 AUIRLR3636 Datasheet Page 5 AUIRLR3636 Datasheet Page 6 AUIRLR3636 Datasheet Page 7 AUIRLR3636 Datasheet Page 8 AUIRLR3636 Datasheet Page 9 AUIRLR3636 Datasheet Page 10

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AUIRLR3636 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3779pF @ 50V
FET Feature-
Power Dissipation (Max)143W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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