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STU6N65M2

STU6N65M2

For Reference Only

Part Number STU6N65M2
PNEDA Part # STU6N65M2
Description MOSFET N-CH 650V 4A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 17,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU6N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU6N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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STU6N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.8nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds226pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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