BFT92E6327
For Reference Only
| Part Number | BFT92E6327 |
| PNEDA Part # | BFT92E6327 |
| Description | RF TRANS PNP 15V 5GHZ SOT23-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,184 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFT92E6327 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFT92E6327 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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BFT92E6327 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz |
| Gain | 8dB ~ 13.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15mA, 8V |
| Current - Collector (Ic) (Max) | 25mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1GHz Noise Figure (dB Typ @ f) 4.5dB @ 500MHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA, 1V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f) - Gain 10.3dB ~ 11.65dB Power - Max 225W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V Current - Collector (Ic) (Max) 5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55CX Supplier Device Package 55CX |
