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BSC027N03S G

BSC027N03S G

For Reference Only

Part Number BSC027N03S G
PNEDA Part # BSC027N03S-G
Description MOSFET N-CH 30V 100A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC027N03S G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC027N03S G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC027N03S G, BSC027N03S G Datasheet (Total Pages: 10, Size: 373.58 KB)
PDFBSC027N03S G Datasheet Cover
BSC027N03S G Datasheet Page 2 BSC027N03S G Datasheet Page 3 BSC027N03S G Datasheet Page 4 BSC027N03S G Datasheet Page 5 BSC027N03S G Datasheet Page 6 BSC027N03S G Datasheet Page 7 BSC027N03S G Datasheet Page 8 BSC027N03S G Datasheet Page 9 BSC027N03S G Datasheet Page 10

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BSC027N03S G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6540pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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