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BSC085N025S G

BSC085N025S G

For Reference Only

Part Number BSC085N025S G
PNEDA Part # BSC085N025S-G
Description MOSFET N-CH 25V 35A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC085N025S G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC085N025S G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC085N025S G, BSC085N025S G Datasheet (Total Pages: 10, Size: 380.01 KB)
PDFBSC085N025S G Datasheet Cover
BSC085N025S G Datasheet Page 2 BSC085N025S G Datasheet Page 3 BSC085N025S G Datasheet Page 4 BSC085N025S G Datasheet Page 5 BSC085N025S G Datasheet Page 6 BSC085N025S G Datasheet Page 7 BSC085N025S G Datasheet Page 8 BSC085N025S G Datasheet Page 9 BSC085N025S G Datasheet Page 10

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BSC085N025S G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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