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BSC0908NSATMA1

BSC0908NSATMA1

For Reference Only

Part Number BSC0908NSATMA1
PNEDA Part # BSC0908NSATMA1
Description MOSFET N-CH 34V 49A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC0908NSATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC0908NSATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC0908NSATMA1, BSC0908NSATMA1 Datasheet (Total Pages: 10, Size: 598.23 KB)
PDFBSC0908NSATMA1 Datasheet Cover
BSC0908NSATMA1 Datasheet Page 2 BSC0908NSATMA1 Datasheet Page 3 BSC0908NSATMA1 Datasheet Page 4 BSC0908NSATMA1 Datasheet Page 5 BSC0908NSATMA1 Datasheet Page 6 BSC0908NSATMA1 Datasheet Page 7 BSC0908NSATMA1 Datasheet Page 8 BSC0908NSATMA1 Datasheet Page 9 BSC0908NSATMA1 Datasheet Page 10

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BSC0908NSATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)34V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1220pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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