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BSD816SNL6327HTSA1

BSD816SNL6327HTSA1

For Reference Only

Part Number BSD816SNL6327HTSA1
PNEDA Part # BSD816SNL6327HTSA1
Description MOSFET N-CH 20V 1.4A SOT363
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,822
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSD816SNL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSD816SNL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSD816SNL6327HTSA1, BSD816SNL6327HTSA1 Datasheet (Total Pages: 9, Size: 472.03 KB)
PDFBSD816SNL6327HTSA1 Datasheet Cover
BSD816SNL6327HTSA1 Datasheet Page 2 BSD816SNL6327HTSA1 Datasheet Page 3 BSD816SNL6327HTSA1 Datasheet Page 4 BSD816SNL6327HTSA1 Datasheet Page 5 BSD816SNL6327HTSA1 Datasheet Page 6 BSD816SNL6327HTSA1 Datasheet Page 7 BSD816SNL6327HTSA1 Datasheet Page 8 BSD816SNL6327HTSA1 Datasheet Page 9

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BSD816SNL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 2.5V
Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 2.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT363-6
Package / Case6-VSSOP, SC-88, SOT-363

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