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BSF045N03MQ3 G

BSF045N03MQ3 G

For Reference Only

Part Number BSF045N03MQ3 G
PNEDA Part # BSF045N03MQ3-G
Description MOSFET N-CH 30V 63A WDSON-2
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSF045N03MQ3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSF045N03MQ3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSF045N03MQ3 G, BSF045N03MQ3 G Datasheet (Total Pages: 11, Size: 605.6 KB)
PDFBSF045N03MQ3 G Datasheet Cover
BSF045N03MQ3 G Datasheet Page 2 BSF045N03MQ3 G Datasheet Page 3 BSF045N03MQ3 G Datasheet Page 4 BSF045N03MQ3 G Datasheet Page 5 BSF045N03MQ3 G Datasheet Page 6 BSF045N03MQ3 G Datasheet Page 7 BSF045N03MQ3 G Datasheet Page 8 BSF045N03MQ3 G Datasheet Page 9 BSF045N03MQ3 G Datasheet Page 10 BSF045N03MQ3 G Datasheet Page 11

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BSF045N03MQ3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 15V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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