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BSF083N03LQ G

BSF083N03LQ G

For Reference Only

Part Number BSF083N03LQ G
PNEDA Part # BSF083N03LQ-G
Description MOSFET N-CH 30V 53A MG-WDSON-2
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSF083N03LQ G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSF083N03LQ G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSF083N03LQ G, BSF083N03LQ G Datasheet (Total Pages: 11, Size: 561.64 KB)
PDFBSF083N03LQ G Datasheet Cover
BSF083N03LQ G Datasheet Page 2 BSF083N03LQ G Datasheet Page 3 BSF083N03LQ G Datasheet Page 4 BSF083N03LQ G Datasheet Page 5 BSF083N03LQ G Datasheet Page 6 BSF083N03LQ G Datasheet Page 7 BSF083N03LQ G Datasheet Page 8 BSF083N03LQ G Datasheet Page 9 BSF083N03LQ G Datasheet Page 10 BSF083N03LQ G Datasheet Page 11

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BSF083N03LQ G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 15V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 36W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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