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SQR40N10-25_GE3

SQR40N10-25_GE3

For Reference Only

Part Number SQR40N10-25_GE3
PNEDA Part # SQR40N10-25_GE3
Description MOSFET N-CH 100V 40A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,656
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQR40N10-25_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQR40N10-25_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQR40N10-25_GE3, SQR40N10-25_GE3 Datasheet (Total Pages: 9, Size: 205.78 KB)
PDFSQR40N10-25_GE3 Datasheet Cover
SQR40N10-25_GE3 Datasheet Page 2 SQR40N10-25_GE3 Datasheet Page 3 SQR40N10-25_GE3 Datasheet Page 4 SQR40N10-25_GE3 Datasheet Page 5 SQR40N10-25_GE3 Datasheet Page 6 SQR40N10-25_GE3 Datasheet Page 7 SQR40N10-25_GE3 Datasheet Page 8 SQR40N10-25_GE3 Datasheet Page 9

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SQR40N10-25_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs25mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3380pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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