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BSP149 E6327

BSP149 E6327

For Reference Only

Part Number BSP149 E6327
PNEDA Part # BSP149-E6327
Description MOSFET N-CH 200V 660MA SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP149 E6327 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP149 E6327
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSP149 E6327 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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