BSR58,215
For Reference Only
| Part Number | BSR58,215 |
| PNEDA Part # | BSR58-215 |
| Description | JFET N-CH 40V 250MW SOT23 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 6,768 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSR58 Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BSR58,215 |
| Category | Semiconductors › Transistors › Transistors - JFETs |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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BSR58 Specifications
| Manufacturer | NXP USA Inc. |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 800mV @ 0.5nA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Resistance - RDS(On) | 60 Ohms |
| Power - Max | 250mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 (TO-236AB) |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V Current Drain (Id) - Max 10mA Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V Resistance - RDS(On) - Power - Max 30mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 3-SMD, Flat Leads Supplier Device Package 3-USFP |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 15mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds 16pF @ 20V Resistance - RDS(On) 50 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 30mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 3nA Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V (VGS) Resistance - RDS(On) 10 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
