Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUZ31H3046XKSA1

BUZ31H3046XKSA1

For Reference Only

Part Number BUZ31H3046XKSA1
PNEDA Part # BUZ31H3046XKSA1
Description MOSFET N-CH 200V 14.5A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ31H3046XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ31H3046XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ31H3046XKSA1, BUZ31H3046XKSA1 Datasheet (Total Pages: 10, Size: 796.03 KB)
PDFBUZ31H3046XKSA1 Datasheet Cover
BUZ31H3046XKSA1 Datasheet Page 2 BUZ31H3046XKSA1 Datasheet Page 3 BUZ31H3046XKSA1 Datasheet Page 4 BUZ31H3046XKSA1 Datasheet Page 5 BUZ31H3046XKSA1 Datasheet Page 6 BUZ31H3046XKSA1 Datasheet Page 7 BUZ31H3046XKSA1 Datasheet Page 8 BUZ31H3046XKSA1 Datasheet Page 9 BUZ31H3046XKSA1 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUZ31H3046XKSA1 Datasheet
  • where to find BUZ31H3046XKSA1
  • Infineon Technologies

  • Infineon Technologies BUZ31H3046XKSA1
  • BUZ31H3046XKSA1 PDF Datasheet
  • BUZ31H3046XKSA1 Stock

  • BUZ31H3046XKSA1 Pinout
  • Datasheet BUZ31H3046XKSA1
  • BUZ31H3046XKSA1 Supplier

  • Infineon Technologies Distributor
  • BUZ31H3046XKSA1 Price
  • BUZ31H3046XKSA1 Distributor

BUZ31H3046XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1120pF @ 25V
FET Feature-
Power Dissipation (Max)95W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

TSM60NB600CF C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

528pF @ 100V

FET Feature

-

Power Dissipation (Max)

41.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220S

Package / Case

TO-220-3 Full Pack

SI4666DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

16.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1145pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STE48NM50

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

550V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

FET Feature

-

Power Dissipation (Max)

450W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

ISOTOP

TK65G10N1,RQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

65A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5400pF @ 50V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL3714ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

SMBJ45A-E3/52

SMBJ45A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 45V 72.7V DO214AA

0451015.MRL

0451015.MRL

Littelfuse

FUSE BRD MNT 15A 65VAC/VDC 2SMD

MC33161PG

MC33161PG

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8DIP

XC7A75T-2FGG676I

XC7A75T-2FGG676I

Xilinx

IC FPGA 300 I/O 676FBGA

NFM21CC223R1H3D

NFM21CC223R1H3D

Murata

CAP FEEDTHRU 0.022UF 50V 0805

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

IRF7853PBF

IRF7853PBF

Infineon Technologies

MOSFET N-CH 100V 8.3A 8-SOIC

MMBZ5254B

MMBZ5254B

ON Semiconductor

DIODE ZENER 27V 350MW SOT23-3

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120