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BYG24JHM3_A/I

BYG24JHM3_A/I

For Reference Only

Part Number BYG24JHM3_A/I
PNEDA Part # BYG24JHM3_A-I
Description DIODE AVALANCHE 600V 1.5A DO214
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 4,086
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYG24JHM3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYG24JHM3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYG24JHM3_A/I, BYG24JHM3_A/I Datasheet (Total Pages: 4, Size: 87.44 KB)
PDFBYG24J-E3/TR3 Datasheet Cover
BYG24J-E3/TR3 Datasheet Page 2 BYG24J-E3/TR3 Datasheet Page 3 BYG24J-E3/TR3 Datasheet Page 4

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BYG24JHM3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1.5A
Voltage - Forward (Vf) (Max) @ If1.25V @ 1.5A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)140ns
Current - Reverse Leakage @ Vr1µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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600V

Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

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