CSD16327Q3
For Reference Only
| Part Number | CSD16327Q3 |
| PNEDA Part # | CSD16327Q3 |
| Description | MOSFET N-CH 25V 60A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 88,392 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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CSD16327Q3 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD16327Q3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD16327Q3 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 24A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 64nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package Sawn on foil Package / Case Die |
