CSD16403Q5A
For Reference Only
| Part Number | CSD16403Q5A |
| PNEDA Part # | CSD16403Q5A |
| Description | MOSFET N-CH 25V 100A 8-SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 81,288 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD16403Q5A Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD16403Q5A |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD16403Q5A Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Vgs (Max) | +16V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 354pF @ 25V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3, IPak, Short Leads |
Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 950V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 19A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 100V FET Feature - Power Dissipation (Max) 450W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 41A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9080pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 143W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
