Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD17559Q5

CSD17559Q5

For Reference Only

Part Number CSD17559Q5
PNEDA Part # CSD17559Q5
Description MOSFET N-CH 30V 100A 8SON
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 58,176
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD17559Q5 Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD17559Q5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD17559Q5 Datasheet
  • where to find CSD17559Q5
  • Texas Instruments

  • Texas Instruments CSD17559Q5
  • CSD17559Q5 PDF Datasheet
  • CSD17559Q5 Stock

  • CSD17559Q5 Pinout
  • Datasheet CSD17559Q5
  • CSD17559Q5 Supplier

  • Texas Instruments Distributor
  • CSD17559Q5 Price
  • CSD17559Q5 Distributor

CSD17559Q5 Specifications

Manufacturer
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.15mOhm @ 40A, 10V
Vgs(th) (Max) @ Id1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9200pF @ 15V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSON-CLIP (5x6)
Package / Case8-PowerTDFN

The Products You May Be Interested In

SIRA02DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

6150pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 71.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPB35N10S3L26ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26.3mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDMS0306S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRF7233TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 9.5A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF3205ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 66A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3450pF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

AT24C256-10TI-2.7

AT24C256-10TI-2.7

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8TSSOP

MMBT2369LT1G

MMBT2369LT1G

ON Semiconductor

TRANS NPN 15V 0.2A SOT23

A42MX16-PQ160

A42MX16-PQ160

Microsemi

IC FPGA 125 I/O 160QFP

MAX4162ESA+

MAX4162ESA+

Maxim Integrated

IC OPAMP GP 1 CIRCUIT 8SOIC

MAX1853EXT

MAX1853EXT

Maxim Integrated

IC REG CHARGE PUMP INV SC70-6

FPF2123

FPF2123

ON Semiconductor

IC LOAD SWITCH FULL FUNC SOT23-5

DS3231SN#T&R

DS3231SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 16-SOIC

2N4416A

2N4416A

Central Semiconductor Corp

JFET N-CH 35V 0.3W TO-72

MBT3904DW1T1G

MBT3904DW1T1G

ON Semiconductor

TRANS 2NPN 40V 0.2A SC88

BAT43WS-7-F

BAT43WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOD323

AD8044ARZ-14

AD8044ARZ-14

Analog Devices

IC OPAMP VFB 4 CIRCUIT 14SOIC

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80