CSD19533Q5A
For Reference Only
| Part Number | CSD19533Q5A |
| PNEDA Part # | CSD19533Q5A |
| Description | MOSFET N-CH 100V 100A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 91,338 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD19533Q5A Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD19533Q5A |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD19533Q5A Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 46mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta), 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 110A (Ta), 194A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5940pF @ 20V FET Feature - Power Dissipation (Max) 188W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DDPAK/TO-263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
